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vishay siliconix SI4564DY document number: 65922 s10-0455-rev. b, 22-feb-10 www.vishay.com 1 n- and p-channel 40 v (d-s) mosfet features ? halogen-free according to iec 61249-2-21 definition ? trenchfet ? power mosfet ? 100 % r g and uis tested ? compliant to rohs directive 2002/95/ec applications ? notebook pcs product summary v ds (v) r ds(on) ( ) i d (a) a q g (typ.) n-channel 40 0.0175 at v gs = 10 v 10 9.8 0.020 at v gs = 4.5 v 9.2 p-channel - 40 0.021 at v gs = - 10 v - 9.2 21.7 0.028 at v gs = - 4.5 v - 7.4 s 1 d 1 g 1 d 1 s 2 d 2 g 2 d 2 so-8 5 6 7 8 top view 2 3 4 1 ordering information: SI4564DY-t1-ge3 (lead (pb)-free and halogen-free) n-channel mosfet d 1 g 1 s 1 s 2 g 2 d 2 p-channel mosfet notes: a. based on t c = 25 c. b. surface mounted on 1" x 1" fr4 board. c. t = 10 s. d. maximum under steady state conditions is 120 c/w (n-channel) and 110 c/w (p-channel). absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol n-channel p-channel unit drain-source voltage v ds 40 - 40 v gate-source voltage v gs 16 20 continuous drain current (t j = 150 c) t c = 25 c i d 10 - 9.2 a t c = 70 c 8- 7.4 t a = 25 c 8.0 b, c - 7.2 b, c t a = 70 c 6.2 b, c - 5.8 b, c pulsed drain current (10 s pulse width) i dm 40 - 40 source-drain current diode current t c = 25 c i s 2.6 - 2.6 t a = 25 c 1.6 b, c - 1.6 b, c pulsed source-drain current i sm 40 - 40 single pulse avalanche current l = 0.1 mh i as 10 - 20 single pulse avalanche energy e as 520mj maximum power dissipation t c = 25 c p d 3.1 3.2 w t c = 70 c 22.1 t a = 25 c 2 b, c 2 b, c t a = 70 c 1.28 b, c 1.28 b, c operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings parameter symbol n-channel p-channel unit typ. max. typ. max. maximum junction-to-ambient b, d t 10 s r thja 50 62.5 47 62.5 c/w maximum junction-to-foot (drain) steady state r thjf 30 40 29 38
www.vishay.com 2 document number: 65922 s10-0455-rev. b, 22-feb-10 vishay siliconix SI4564DY specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. a max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a n-ch 40 v v gs = 0 v, i d = - 250 a p-ch - 40 v ds temperature coefficient v ds /t j i d = 250 a n-ch 40 mv/c i d = - 250 a p-ch - 34 v gs(th) temperature coefficient v gs(th) /t j i d = 250 a n-ch - 4.1 i d = - 250 a p-ch 5.0 gate threshold voltage v gs(th) v ds = v gs , i d = 250 a n-ch 0.8 2.0 v v ds = v gs , i d = - 250 a p-ch - 1.2 - 2.5 gate-body leakage i gss v ds = 0 v, v gs = 16 v n-ch 100 na v ds = 0 v, v gs = 20 v p-ch 100 zero gate voltage drain current i dss v ds = 40 v, v gs = 0 v n-ch 1 a v ds = - 40 v, v gs = 0 v p-ch - 1 v ds = 40 v, v gs = 0 v, t j = 55 c n-ch 10 v ds = - 40 v, v gs = 0 v, t j = 55 c p-ch - 10 on-state drain current b i d(on) v ds = 5 v, v gs = 10 v n-ch 20 a v ds = - 5 v, v gs = - 10 v p-ch - 20 drain-source on-state resistance b r ds(on) v gs = 10 v, i d = 8 a n-ch 0.0145 0.0175 v gs = - 10 v, i d = - 8 a p-ch 0.0175 0.021 v gs = 4.5 v, i d = 5 a n-ch 0.017 0.020 v gs = - 4.5 v, i d = - 5 a p-ch 0.0232 0.028 forward transconductance b g fs v ds = 15 v, i d = 8 a n-ch 27 s v ds = - 15 v, i d = - 8 a p-ch 25 dynamic a input capacitance c iss n-channel v ds = 20 v, v gs = 0 v, f = 1 mhz p-channel v ds = - 20 v, v gs = 0 v, f = 1 mhz n-ch 855 pf p-ch 2000 output capacitance c oss n-ch 120 p-ch 240 reverse transfer capacitance c rss n-ch 48 p-ch 202 total gate charge q g v ds = 20 v, v gs = 10 v, i d = 10 a n-ch 20.5 31 nc v ds = - 20 v, v gs = - 10 v, i d = - 10 a p-ch 41.5 63 n-channel v ds = 20 v, v gs = 4.5 v, i d = 10 a p-channel v ds = - 20 v, v gs = - 4.5 v, i d = - 10 a n-ch 9.8 15 p-ch 21.7 33 gate-source charge q gs n-ch 2.6 p-ch 5.6 gate-drain charge q gd n-ch 2.6 p-ch 9.8 gate resistance r g f = 1 mhz n-ch 0.3 1.5 3.0 p-ch 1.3 6.4 12.8
document number: 65922 s10-0455-rev. b, 22-feb-10 www.vishay.com 3 vishay siliconix SI4564DY notes: a. guaranteed by design, not subject to production testing. b. pulse test; pulse width 300 s, duty cycle 2 %. stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those indi cated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended per iods may affect device reliability. specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. a max. unit dynamic a tu r n - o n d e l ay t i m e t d(on) n-channel v dd = 20 v, r l = 2 i d ? 10 a, v gen = 10 v, r g = 1 p-channel v dd = - 20 v, r l = 2 i d ? - 10 a, v gen = - 10 v, r g = 1 n-ch 7 14 ns p-ch 9 18 rise time t r n-ch 10 20 p-ch 9 18 turn-off delay time t d(off) n-ch 18 36 p-ch 50 90 fall time t f n-ch 9 18 p-ch 14 28 tu r n - o n d e l ay t i m e t d(on) n-channel v dd = 20 v, r l = 2 i d ? 10 a, v gen = 4.5 v, r g = 1 p-channel v dd = - 20 v, r l = 2 i d ? - 10 a, v gen = - 4.5 v, r g = 1 n-ch 11 22 p-ch 42 75 rise time t r n-ch 15 30 p-ch 40 70 turn-off delay time t d(off) n-ch 23 46 p-ch 40 70 fall time t f n-ch 13 26 p-ch 15 30 drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c n-ch 2.6 a p-ch - 2.6 pulse diode forward current a i sm n-ch 40 p-ch - 40 body diode voltage v sd i s = 2 a n-ch 0.74 1.2 v i s = - 2 a p-ch - 0.77 - 1.2 body diode reverse recovery time t rr n-channel i f = 5 a, di/dt = 100 a/s, t j = 25 c p-channel i f = - 5 a, di/dt = - 100 a/s, t j = 25 c n-ch 17 34 ns p-ch 30 60 body diode reverse recovery charge q rr n-ch 10 20 nc p-ch 26 52 reverse recovery fall time t a n-ch 10 ns p-ch 15 reverse recovery rise time t b n-ch 7 p-ch 15
www.vishay.com 4 document number: 65922 s10-0455-rev. b, 22-feb-10 vishay siliconix SI4564DY n-channel typical characteristics 25 c, unless otherwise noted output characteristics on-resistance vs. drain current and gate voltage gate charge 0 8 16 24 32 40 0.0 0.5 1.0 1.5 2.0 2.5 v gs =10vthru4v v gs =3v v ds - drain-to-source voltage (v) - drain current (a) i d v gs =2v 0.010 0.013 0.016 0.019 0.022 0.025 0 1020304050 v gs =4.5v v gs =10v - on-resistance ( ) r ds(on) i d - drain current (a) 0 2 4 6 8 10 0.0 4.4 8.8 13.2 17.6 22.0 i d =10a v ds =10v v ds =20v v ds =30v - gate-to-source voltage (v) q g - total gate charge (nc) v gs transfer characteristics capacitance on-resistance vs. junction temperature 0 2 4 6 8 10 0.0 0.6 1.2 1.8 2.4 3.0 t c = 25 c t c = 125 c t c = - 55 c v gs - gate-to-source voltage (v) - drain current (a) i d c rss 0 240 480 720 960 1200 0 8 16 24 32 40 c iss c oss v ds - drain-to-source voltage (v) c - capacitance (pf) 0.5 0.8 1.1 1.4 1.7 2.0 - 50 - 25 0 25 50 75 100 125 150 i d =8a v gs =4.5v v gs =10v t j - junction temperature (c) (normalized) - on-resistance r ds(on)
document number: 65922 s10-0455-rev. b, 22-feb-10 www.vishay.com 5 vishay siliconix SI4564DY n-channel typical characteristics 25 c, unless otherwise noted source-drain diode forward voltage threshold voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1 0.01 0.001 0.1 10 100 t j = 25 c t j = 150 c v sd - source-to-drain voltage (v) - source current (a) i s - 0.6 - 0.4 - 0.2 0 0.2 0.4 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a i d =5ma variance (v) v gs(th) t j - temperature (c) on-resistance vs. gate-to-source voltage single pulse power, junction-to-ambient 0.00 0.02 0.04 0.06 0.08 0.10 012345678910 t j =25 c i d =8a t j = 125 c - on-resistance ( ) r ds(on) v gs - gate-to-source voltage (v) 0 12 24 36 48 60 0 1 1 1 0 0 . 00.01 time (s) power (w) 0.1 safe operating area, junction-to-ambient 0.01 100 1 100 0.01 0.1 1ms 10 s 10 ms 0.1 1 10 10 t a = 25 c single pulse dc bvdss limited 1s 100 ms limited by r ds(on) * v ds - drain-to-source voltage (v) *v gs > minimum v gs at which r ds(on) is specied - drain current (a) i d
www.vishay.com 6 document number: 65922 s10-0455-rev. b, 22-feb-10 vishay siliconix SI4564DY n-channel typical characteristics 25 c, unless otherwise noted * the power dissipation p d is based on t j(max) = 150 c, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determine the current rating, when this rating falls below the package limit. current derating* 0.0 2.2 4.4 6.6 8.8 11.0 0 255075100125150 t c - case temperature (c) i d - drain current (a) power derating, junction-to-foot 0.0 0.8 1.6 2.4 3.2 4.0 0 25 50 75 100 125 150 t c - case temperature (c) power (w) power derating, junction-to-ambient 0.0 0.3 0.6 0.9 1.2 1.5 0 25 50 75 100 125 150 t a - ambient temperature (c) power (w)
document number: 65922 s10-0455-rev. b, 22-feb-10 www.vishay.com 7 vishay siliconix SI4564DY n-channel typical characteristics 25 c, unless otherwise noted normalized thermal transient im pedance, junction-to-ambient 10 -3 10 -2 1 10 1000 10 -1 10 -4 100 0.2 0.1 square wave pulse duration (s) normalized effective transient thermal impedance 1 0.1 0.01 t 1 t 2 notes: p dm 1. duty cycle, d = 2. per unit base = r thja =120 c/w 3. t jm -t a =p dm z thja (t) t 1 t 2 4. surface mounted duty cycle = 0.5 single pulse 0.02 0.05 normalized thermal transient impedance, junction-to-foot 10 -3 10 -2 0 1 1 10 -1 10 -4 0.2 0.1 duty cycle = 0.5 square wave pulse duration (s) normalized effective transient thermal impedance 1 0.1 0.01 0.05 single pulse 0.02
www.vishay.com 8 document number: 65922 s10-0455-rev. b, 22-feb-10 vishay siliconix SI4564DY p-channel typical characteristics 25 c, unless otherwise noted output characteristics on-resistance vs. drain current and gate voltage gate charge 0 0 0.5 1.0 1.5 2.0 2.5 8 16 24 32 40 v ds - drain-to-source voltage (v) i d - drain current (a) v gs = 10 v thru 4 v 3 v 0.015 0 8 16 24 32 40 0.019 0.023 0.027 0.031 0.035 i d - drain current (a) r ds(on) - on-resistance ( ) v gs = 4.5 v v gs = 10 v 0 9 18 27 36 45 v gs - gate-to-source voltage (v) q g - total gate charge 0 2 4 6 8 10 i d = 10 a v ds = 20 v v ds = 30 v v ds = 10 v transfer characteristics capacitance on-resistance vs. junction temperature 0 012345 2 4 6 8 10 v gs - gate-to-source voltage (v) i d - drain current (a) t c = 125 c t c = 25 c t c = - 55 c 0 0 8 16 24 32 40 620 1240 1860 2480 3100 v ds - drain-to-source voltage (v) c - capacitance (pf) c rss c oss c iss 0.6 - 50 - 25 25 75 125 0 50 100 150 0.8 1.2 1.0 1.6 1.4 1.8 r ds(on) - on-resistance (normalized) t j - junction temperature (c) v gs = 10 v v gs = 4.5 v i d = 8 a
document number: 65922 s10-0455-rev. b, 22-feb-10 www.vishay.com 9 vishay siliconix SI4564DY p-channel typical characteristics 25 c, unless otherwise noted source-drain diode forward voltage threshold voltage 0.001 0.0 0.2 0.6 1.0 0.4 0.8 1.2 0.01 1 0.1 10 100 i s - source current (a) v sd - source-to-drain voltage (v) t j = 150 c t j = 25 c - 0.4 - 50 - 25 25 75 125 0 50 100 150 - 0.1 0.2 0.5 0.8 t j - junction temperature (c) v gs(th) - variance (v) i d = 5 ma i d = 250 a on-resistance vs. gate-to-source voltage single pulse power, junction-to-ambient 0.00 02 6 489 15 3710 0.08 0.06 0.04 0.02 0.10 v gs - gate-to-source voltage (v) r ds(on) - on-resistance ( ) t j = 125 c t j = 25 c i d = 8 a 0 0.001 0.01 0.1 1 10 10 20 30 40 50 time (s) power (w) safe operating area, junction-to-ambient 0.01 0.01 0.1 1 100 10 0.1 1 10 100 v ds - drain-to-source voltage (v) * v gs > minimum v gs at which r ds(on) is specied i d - drain current (a) limited by r ds(on) * bvdss limited t a = 25 c single pulse 1 ms 10 ms 1 s 10 s 100 ms dc
www.vishay.com 10 document number: 65922 s10-0455-rev. b, 22-feb-10 vishay siliconix SI4564DY p-channel typical characteristics 25 c, unless otherwise noted * the power dissipation p d is based on t j(max) = 150 c, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determine the current rating, when this rating falls below the package limit. current derating* 0 0 25 50 75 100 150 125 2.2 4.4 6.6 8.8 11.0 t c - case temperature (c) i d - drain current (a) power derating, junction-to-foot 0 0 25 50 75 100 125 150 0.8 1.6 2.4 3.2 4.0 t c - case temperature (c) power (w) power derating, junction-to-ambient 0 0 25 50 75 100 125 150 0.3 0.6 0.9 1.2 1.5 t a - ambient temperature (c) power (w)
document number: 65922 s10-0455-rev. b, 22-feb-10 www.vishay.com 11 vishay siliconix SI4564DY p-channel typical characteristics 25 c, unless otherwise noted vishay siliconix maintains worldwide manufacturing capability. pr oducts may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65922 . normalized thermal transient impedance, junction-to-ambient 10 -4 10 -3 10 -2 10 -1 1 10 100 1000 1 0.1 0.01 square wave pulse duration (s) normalized effective transient thermal impedance notes: 1. duty cycle, d = 2. per unit base = r thja = 110 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 4. surface mounted t 1 p dm t 2 duty cycle = 0.5 single pulse 0.2 0.05 0.1 0.02 normalized thermal transient impedance, junction-to-foot 10 -4 10 -3 10 -2 10 -1 10 1 1 0.1 0.01 square wave pulse duration (s) normalized effective transient thermal impedance single pulse 0.05 0.02 duty cycle = 0.5 0.2 0.1
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.

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